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 ZXTP25020CFH 20V, SOT23, PNP medium power transistor
Summary
BVCEO > -20V BVECO > -7V IC(cont) = -4A RCE(sat) = 34m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * High power dissipation SOT23 package High peak current Low saturation voltage 7V reverse blocking voltage
E
Applications
* * * * MOSFET and IGBT gate driving DC - DC converters Motor drive High side driver
E C B Pinout - top view
Tape width (mm) 8 Quantity per reel 3,000
Ordering information
Device ZXTP25020CFHTA Reel size (inches) 7
Device marking
1B2
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25020CFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(b) Peak pulse current Base current Power dissipation at TA =25C(a) Linear derating factor Power dissipation at TA =25C Linear derating factor Power dissipation at TA =25C(d) Linear derating factor Power dissipation at TA =25C Linear derating factor Operating and storage temperature range Tj, Tstg
(d) (b)
Symbol VCBO VCEO VECO VEBO IC ICM IB PD PD PD PD
Limit -25 -20 -7 -7 -4 -10 -1 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to 150
Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25020CFH
Characteristics
Issue 1 - May 2006
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ZXTP25020CFH
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Symbol BVCBO BVCEO BVEBO Min. -25 -20 -7 -7 -7 Typ. -50 -35 -8.2 -8.0 -8.8 <-1 <-1 -43 -70 -120 -150 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 200 150 85 -930 -810 350 250 140 40 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT COBO td tr ts tf 285 32.4 38.4 49.2 168 55
300 s; duty cycle 2%.
Max.
Unit Conditions V V V V V IC = -100 A IC = -10mA (*) IE = -100 A IE = -100 A(*) RBC < 10k or 0.25 < VBC < -0.25V IE = -100 A(*) VCB = -20V VCB = -20V, Tamb= 100C VEB = -5.6V IC = -1A, IB = -100mA(*) IC = -1A, IB = -20mA(*) IC = -2A, IB = -40mA(*) IC = -4A, IB = -200mA(*) IC = -4A, IB = -200mA(*) IC = -4A, VCE = -2V(*) IC = -10mA, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -4A, VCE = -2V(*) IC = -10A, VCE = -2V(*) MHz IC = -50mA, VCE = -10V f = 100MHz
Emitter-collector breakdown BVECX voltage (reverse blocking) Emitter-collector breakdown BVECO voltage (base open) Collector-base cut-off current ICBO
-50 -20 -50 -55 -100 -170 -210 -1050 -900 500
nA A nA mV mV mV mV mV mV
Emitter-base cut-off current IEBO Collector-emitter saturation voltage VCE(sat)
40
pF ns ns ns ns
VCB = -10V, f = 1MHz(*) VCC = -15V. IC = -750mA, IB1 = IB2= -15mA
NOTES: (*) Measured under pulsed conditions. Pulse width
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25020CFH
Typical characteristics
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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ZXTP25020CFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - May 2006
(c) Zetex Semiconductors plc 2006
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